t y pical thermal resistance (note 4) r 100 c/w 4. thermal resistance from juction to ambient. 1.0a super f ast recovery rectifier characteristi c s ymbol unit BYV26D ? byv26e BYV26D ? byv26e features ! diffus ed junction ! low forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability me c hanical data c ! c a se: molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.34 grams (approx.) ! mounting position: any ! marking: type number maximum r a tings and electrical characteristics @t a =2 5 c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. 1 of 2 ! le a d free: for rohs / lead free version p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms reverse voltage v r(rm s) z ibo seno electronic engineering co., ltd. www.senocn.com BYV26D byv26e 800 1000 v 640 700 v pf ns v 2.5 a v erage rectified output current (note 1) @t a = 55 c i o 1.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward v o ltage @i f = 1 . 0a v fm peak reverse current @t a = 25 c at rated dc blocking voltage @t a = 100 c i rm 5.0 150 a reverse recovery time (note 2) t rr t y pical junction capacitance (note 3) c j operat i ng temperature range t j -65 to +150 c storage temperature range t stg -65 t o +150 c 35 45 ja note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured with if = 0.5a, ir = 1.0a, irr = 0.25a. see figure 5. 3. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-41 dim m in max a 24.5 ? b 4. 06 5. 21 c 0.60 0. 80 d 2. 00 3. 00 all d i mensions in mm a l l d a t a s h e e t
0 i , peak forward surge current (a) fsm 0 10 20 30 1 10 100 number of cycles at 60 hz fig. 3 peak forward surge current pulse width 8.3ms single half-sine-wave (jedec method) 1 10 100 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (av) t , ambient temperature (c) fig. 1 forward derating curve a single phase half-wave 60 hz resistive or inductive load 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor 5/10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 2 of 2 i , inst antaneous forward current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25 c j pulse width = 300 s m z ibo seno electronic engineering co., ltd. www.senocn.com BYV26D ? byv26e 1.0 2.0 3.0 4.0 0.01 0.1 1.0 2.0 byv26a ? byv26c a l l d a t a s h e e t
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